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APT30DF120HJ
ISOTOP(R)Fast Diode Full Bridge Power Module
VRRM = 1200V IC = 30A @ Tc = 80C
Application * * * * Switch mode power supplies rectifier Induction heating Welding equipment High speed rectifiers
Features * * * * * * * * Ultra fast recovery times Soft recovery characteristics High blocking voltage High current Low leakage current Very low stray inductance High level of integration ISOTOP(R) Package (SOT-227)
+
~ -
Benefits * * * * * * Outstanding performance at high frequency operation Low losses Low noise switching Direct mounting to heatsink (isolated package) Low junction to case thermal resistance RoHS Compliant
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Absolute maximum ratings
Symbol VR VRRM IF(AV) IFSM Parameter Maximum DC reverse Voltage Maximum Peak Repetitive Reverse Voltage Maximum Average Forward Current Duty cycle = 50% 8.3ms TC = 25C TC = 80C TJ = 45C Max ratings 1200 45 30 210 A
APT30DF120HJ - Rev 0 November, 2009
Unit V
Non-Repetitive Forward Surge Current
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com
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APT30DF120HJ
All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics
Symbol Characteristic VF IRM CT Diode Forward Voltage Maximum Reverse Leakage Current Junction Capacitance Test Conditions IF = 30A IF = 60A Tj = 125C IF = 30A Tj = 25C VR = 1200V Tj = 125C VR = 200V Min Typ 2.5 3.2 1.8 Max 3.1 Unit V 100 500 28 A pF
Dynamic Characteristics
Symbol Characteristic trr Qrr IRRM trr Qrr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current IF = 30A VR = 800V di/dt=1000A/s IF = 30A VR = 800V di/dt = 200A/s Test Conditions Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 125C Min Typ 300 380 360 1700 4 8 160 2550 28 ns
nC A
Max
Unit ns nC A
Thermal and package characteristics
Symbol RthJC RthJA VISOL TJ,TSTG TL Torque Wt Characteristic Junction to Case Thermal resistance Junction to Ambient
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Min
Typ
Max 1.2 20 175 300 1.5
Unit C/W V C N.m g
Storage Temperature Range Max Lead Temp for Soldering:0.063" from case for 10 sec Mounting torque (Mounting = 8-32 or 4mm Machine and terminals = 4mm Machine) Package Weight
2500 -55
29.2
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APT30DF120HJ - Rev 0 November, 2009
APT30DF120HJ
Typical Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 1.4 Thermal Impedance (C/W) 1.2 1 0.8 0.6 0.3 0.4 0.2 0.1 0.05 0.0001 0.001 Single Pulse 0.9 0.7 0.5
0 0.00001
0.01
0.1
1
10
Rectangular Pulse Duration (Seconds) Forward Current vs Forward Voltage trr, Reverse Recovery Time (ns) 80 IF, Forward Current (A)
TJ=125C
Trr vs. Current Rate of Charge
500 400 300
45 A TJ=125C VR=800V
60
40
200 100 0 0 200 400 600
30 A 15 A
20
TJ=25C
0 0.0 1.0 2.0 3.0 4.0 VF, Anode to Cathode Voltage (V) QRR, Reverse Recovery Charge (C) QRR vs. Current Rate Charge
TJ=125C VR=800V
800 1000 1200
-diF/dt (A/s) IRRM vs. Current Rate of Charge IRRM, Reverse Recovery Current (A)
4
30 25 20 15 10 5 0 0 200 400 600 800 1000 1200
-diF/dt (A/s)
45 A TJ=125C VR=800V 30 A 15 A
45 A
3
30 A
2
15 A
1
0
0
200
400 600 800 -diF/dt (A/s)
1000 1200
Capacitance vs. Reverse Voltage 200 160
C, Capacitance (pF)
80 40 0 1 10 100 VR, Reverse Voltage (V) 1000
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APT30DF120HJ - Rev 0 November, 2009
120
APT30DF120HJ
SOT-227 (ISOTOP(R)) Package Outline
31.5 (1.240) 31.7 (1.248) 7.8 (.307) 8.2 (.322) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 11.8 (.463) 12.2 (.480) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places)
r = 4.0 (.157) (2 places)
4.0 (.157) 4.2 (.165) (2 places)
0.75 (.030) 0.85 (.033)
25.2 (0.992) 25.4 (1.000) 3.30 (.130) 12.6 (.496) 4.57 (.180) 12.8 (.504)
3.3 (.129) 3.6 (.143) 14.9 (.587) 15.1 (.594) 30.1 (1.185) 30.3 (1.193) 38.0 (1.496) 38.2 (1.504)
1.95 (.077) 2.14 (.084)
Dimensions in Millimeters and (Inches)
ISOTOP(R) is a registered trademark of ST Microelectronics NV
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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APT30DF120HJ - Rev 0 November, 2009

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